Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
نویسندگان
چکیده
منابع مشابه
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition.
The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (RC). Here we present a systematic study of scaling MoS2 devices and contacts with varying electrode metals and controlled deposition conditions, over a wide range of temperatures (80 to 500 K), carrier densities (10(12) to 10(13) cm(-2)), and contact dimensions (20 to 500 nm). We uncover that Au ...
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Ultrathin molybdenum disulphide (MoS2) has emerged as an interesting layered semiconductor because of its finite energy bandgap and the absence of dangling bonds. However, metals deposited on the semiconducting 2H phase usually form high-resistance (0.7 kΩ μm-10 kΩ μm) contacts, leading to Schottky-limited transport. In this study, we demonstrate that the metallic 1T phase of MoS2 can be locall...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2016
ISSN: 1530-6984,1530-6992
DOI: 10.1021/acs.nanolett.6b01309